Home > Materials Science Centre > Pallab Banerji
I have been working in the area of electronic materials with emphasis on III-V compound semiconductor nanostructures with an aim to tune the properties for specific applications in the field of optoelectronics and energy. Using MOCVD system, growth of quantum wells for fabricating 1.55 mm InGaAs/InP laser structure were undertaken. Expertise of fabricating quantum wells having well width as 19, 39, 78 and 150 Å and barrier of 300 Å are also available. As a continuation, further research on low dimensional structures such as quantum dots and quantum wires are now undertaken with the help of external funding for photovoltaic and memory applications. Studies on growth mode and heteroepitaxial growth is now prime objectives. At the same time, research on thermoelectrics are also started with an aim to develop materials for thermoelectric generators for rural households to recover electricity from waste heat during their cooking. we have experimented with new ideas like impurity resonance, nanostructuring and carrier energy filtering in the area of thermoelectric to obtain enhanced power factor and thermoelectric efficiency.
Hydrothermally grown SnS2/Si nanowire core-shell heterostructure photodetector with excellent optoelectronic performances by Das S., Pal S., Larsson K., Mandal D., Giri S., Banerji P., Chandra A., Basori R. Applied Surface Science 624 - (2023)
Combined effects of indium nanoinclusion and Se-deficiency on thermoelectric performance of n-type indium selenide by Dhama P., Kumar A., Banerji P. Journal of Alloys and Compounds 901 - (2022)
Nitrogen and sulphur doped carbon dot: An excellent biocompatible candidate for in-vitro cancer cell imaging and beyond by Ghosh T., Nandi S., Bhattacharyya S.K., Ghosh S.K., Mandal M., Banerji P., Das N.C. Environmental Research 217 - (2023)
Studies on resistive switching characteristics of aluminum/graphene oxide/semiconductor nonvolatile memory cells by S. Mahaboob Jilani, Tanesh D. Gamot, P. Banerji and S. Chakraborty Carbon 64 - (2013)
Thermoelectric properties of PbSe0.5Te0.5: x (PbI2) with endotaxial nanostructures: a promising n-type thermoelectric material by P. K. Rawat, B. Paul and P. Banerji Nanotechnology 24 - (2013)
Design and Realization of Logic Gates or Functions Using Vertical TEFT Structures by Rahaman M., Banerji P. Silicon - (2022)
Intrinsically Freezing-Tolerant, Conductive, and Adhesive Proton Donor Acceptor Hydrogel for Multifunctional Applications by Dutta A., Panda P. , Das A. , Ganguly D. , Chattopadhyay S. , Banerji P. , Pradhan D. , Das R. K. ACS Applied Polymer Materials 4 7710-7722 (2022)
GaAs metal-oxide-semiconductor based nonvolatile memory devices embedded with ZnO quantum dots by Souvik Kundu, Sankara Rao Gollu, Ramakant Sharma, Nripendra Narayan Halder, Pranab Biswas, P. Banerji and D. Gupta Journal of Applied Physics 114 - (2013)
MOCVD growth and p-type doping of Ga2O3 for solar blind UV photodetector applications Science and Engineering Research Board (SERB)
Scheme for Promotion of Academic and Research Collaboration (SPARC) MHRD
Formation of Double Percolated Conductive Networks (DPCN) and Segregated Structure with Ultra-low Carbon Nanostructure Filler Content in Thermoplastic Elastomers Vulcanizates (TPVs) with Improved Electrical Conductivity and Enhanced Electromagnetic Interference (EMI) Shielding Effectiveness Science and Engineering Research Board (SERB)
Hemant Kumar
Area of Research: Solar photovoltaics
Soumen Giri
Area of Research: Thermoelectric Materials
Bidesh Mahata
Area of Research: Sensor
Trisita Ghosh
Area of Research: Carbon dot and sensors
Roumita Hore
Area of Research: Smart rubber based new generation composites
Sreeja Nath Chowdhury
Area of Research: Conductive thermoplastics Elastomer (TPE) and Thermoplastics Elastomer vulcanizates (TPV)
Suman Samanta
Area of Research: Semiconductor Materials
Sudipta Paik
Area of Research: Semiconductors
Tista Roy
Area of Research: Semiconductors